Sandor Kugler's Home Page
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List of publication 3. I.Pocsik,
K.Tompa, J.Lasanda, S.Kugler, G.Naray-Szabo: Motion
of group in PAA in the solid phase; KFKI
Preprint, 1977-40 4. S.Kugler: Semi-empirical
conformationnal analysis of a liquid crystal
molecule: p-azoxy-anisole; Periodica
Politechnica, 3-4 21.(1977) 5. S.Kugler: A
nematikus folyadékkristályok mikrodinamikájának
vizsgálata; Magyar Fizikai Folyóirat, XXVII,
310-341, (1979) (in Hungarian) 6. S.Kugler,
G.Naray-Szabo: Quantum chemical study of
internal rotations in liquid crystal molecules;
Acta Phys. Hung. 46 69-76 (1979) 9. J.Antal and
S.Kugler: Critical investigation of the
secondary ion emission of pure metals using the
pseudo-atom method; Acta Phys. Hung. 49
351-360 (1980) 10. J.Antal,
S.Kugler and L.Orosz: Further studies on the
secondary ion emission of pure metals using the
pseudo-atom method; Acta Phys. Hung. 51
203-206 (1981) 11. J.Antal,
S.Kugler and M.Riedel: Computer peak
identification and evaluation of SIMS spectra;
Proceeding of the third international conference,
Ed.: A.Benninghoven et al. Springer-Verlag 297-300
(1982) 12. P.Birner,
S.Kugler, K.Simon, G.Naray-Szabo:Theoretical
conformational analysis of substituted
phenylbenzoates; Mol.
Cryst.
Liq.
Cryst.
80 11-17. (1982) 13. W.Steiger,
F.G.Ruedenauer, J.Antal and S.Kugler: Automated
peak interpretation in low resolution SIMS
spectra; a comparison of two algorithms; Vacuum,
33 321-327 (1983) 14. J.Antal and
S.Kugler: Problems in computer evaluation of
SIMS spectra; Vacuum
35 583-587 (1985) 16. S.Kugler and
G.Narai-Szabo: Charge distribution in amorphous
silicon clusters. Quantum chemical study combined
with ring statistics; J.
Non-Cryst.
Solids,
97&98 503-506 (1987) 17. S.Kugler,
P.R.Surjan and G.Naray-Szabo: Theoretical
estimation of static charge fluctuation in
amorphous silicon; Phys.
Rev.
B,
37 9069-9071 (1988)
18. S.Kugler and
I.Laszlo: Connection between topology and
Pi-electron structure in amorphous carbon; Phys.
Rev. B 39 3882-3884 (1989)
19. S.Kugler and
I.Laszlo: Topology and Pi-electron structure in
amorphous carbon; Proc. of Non-crystalline
semiconductors-89, Uzhgorod III. 26-28 (1989) 20. S.Kugler: On
atomic charge fluctuation in amorphous silicon;
Proc. of Non-crystalline semiconductors-89, Uzhgorod
III. 31-33 (1989) 22. S.Kugler,
G.Molnar, G.Peto, E.Zsoldos, L.Rosta, A.Menelle and
R.Bellissent: Neutron diffraction study of the
structure of evaporated pure amorphous silicon;
Phys.
Rev.
B,
40 8030-8032 (1989)
23. I.Laszlo and
S.Kugler: On Pi-electron structure in amorphous
carbon; Proc. of the 19th Annual International
Symposium on the Electronic Structure of Solids,
204-207 1989 Holzhau, GDR 24. S.Kugler and
G.Naray-Szabo: Charge distribution in
diamond-like amorphous carbon, Technical
Report of ISSP, The University of Tokyo Ser. A, No.
2381 (1991) and Jpn.
J. Appl. Phys., 30 7A L1149-1151 (1991)
25. S.Kugler and
G.Naray-Szabo: Weak bonds and atomic charge
distribution in hydrogenated amorphous silicon;
J.
Non-Cryst.
Solids,
137&138 295-298 (1991) 26. I.Laszlo and
S.Kugler: Self doping and hopping conductivity
in amorphous carbon; J.
Non-Cryst.
Solids,
137&138 831-834 (1991) 27. S.Kugler and
G.Naray-Szabo: Atomic charge distribution in
fourfold coordinated amorphous materials. Carbon
and silicon. Acta Phys. Hung. 70 351
(1991) 28. S. Kugler, L.
Pusztai, L. Rosta, P. Chieux, and R. Bellissent: The
structure of evaporated pure amorphous silicon.
Neutron diffraction and Reverse 29. Laszlo Pusztai
and Sandor Kugler: Reverse 30. S. Kugler, K.
Shimakawa, T. Watanabe, K. Hayashi, 31. S. Kugler and L.
Pusztai: Investigations on the structure of
evaporated pure amorphous silicon, Acta Phys.
Hung. 75 261-265 (1994). 32. S. Kugler: Short
Range
Order and Atomic Charge Distribution in Amorphous
Silicon, in Hydrogenated Amorphous Silicon, Solid
State
Phenomena,
Ed.
H
Neber-Aeschbacher,
SCITEC
PUBLICATIONS
44-46 559-568 (1995). 33. Krisztina Kadas,
Istvan Laszlo, and Sandor Kugler: Topologically
determined midgap states in amorphous carbon;
five- and seven-fold rings, J.
Non-Cryst.
Solids.
198-200 91-93 (1996).
34. S. Kugler, A.
Janossy, K. Shimakawa, K. Hayashi, O. Chauvet: The
temperature
dependence
of
electron
spin
resonance
in amorphous carbon films, J.
Non-Cryst.
Solids.
198-200 646-648 (1996).
35. K. Kadas, I.
Laszlo and S. Kugler: Atomic structure and
electronic density of states around the Fermi
level in amorphous carbon models, Solid
State Comm., 97 631-634 (1996).
36. K. Kadas, S.
Kugler and G. Naray-Szabo: The Molecular
Electrostatic Field as a Reactivity Map for the
Si(111) Surface,
J. of Physical Chemistry, 100
8462-67 (1996).
37. Krisztina Kadas
and Sandor Kugler: Midgap states in nitrogen
doped diamond-like amorphous carbon, Solid
State
Comm.,
102 721-723 (1997). 38. Krisztina Kadas
and Sandor Kugler: Impurity levels in phosphorus
and boron doped amorphous silicon, Phil.
Mag.
B
76 281-285 (1997). 39. Krisztina Kadas
G. G. Ferenczy and Sandor Kugler: Theory of
dopant pairs in fourfold coordinated amorphous
semiconductors, J.
Non-Cryst.
Solids,
227-230 367-371 (1998).
40. Krisztian
Kohary, Sandor Kugler and Istvan Laszlo: Molecular
dinamics simulation of amorphous carbon structures,
J.
Non-Cryst.
Solids,
227-230
pp594-596 (1998).
41. S. Kugler, K.
Kohary, and 42. S. Kugler, I.
Laszlo, K. Kohary, and K. Shimakawa: Molecular
Dynamics Simulation of Amorphous Carbon Structures,
Functional Materials, 6 p459 (1999) 43. K. Kohary, S.
Kugler: Growth of amorphous semiconductors:
tigth-binding molecular dinamics study, J.
Non-Cryst.
Solids, 266-269 746-749 (2000). 44. S. Kugler: Current
understanding of structures in amorphous
semiconductors (Review, in Japanese, trans: K.
Shimakawa), Kotai
Butsuri
(Solid
State
Physics)
35 783-790 (2000) 45. S. Kugler and Z.
Varallyay: Possible unusual atomic arrangements
in the structure of amorphous silicon, Phil.
Mag.
Lett.
81 569 (2001)
46. K. Kohary and S.
Kugler: Growth of amorphous carbon. Low energy
Molecular Dynamics simulation of atomic
bombardment, Phys.
Rev.
B,
63 193404 (2001)
47. K. Kohary and S.
Kugler: Time development during growth and
relaxation of a amorphous carbon. Tigth-binding
molecular dynamics study, J.
Non-Cryst.
Solids,
299--302 824-829 (2002).
48. Z. Varallyay and
S. Kugler: Are the triangles and the squares
possible local atomic arrangements in the
structure of amorphous silicon, J.
Non-Cryst.
Solids,
299--302 265-268 (2002).
49. K. Kohary, S.
Kugler, Z Hajnal, T. Kohler, T. Frauenheim, S. Katai
and P. Deak: Atomistic simulation of the
bonbardment process during the BEN phase of
chemical vapor deposition (CVD) of diamond, Diamond
and
Related
Materials,
11 513-518 (2002)
50. K. Kadas and S.
Kugler: Properties of midgap states in doped
amorphous silicon and carbon, J.
Optoelectronics
and Advanced Materials. 4 p455 (2002)
51. S. Kugler, K.
Kohary , K. Kadas and L. Pusztai: Unusual atomic
arrangements in amorphous silicon, Solid
State
Comm.
127 pp305-309 (2003)
52. K. Kohary and S.
Kugler: Growth of amorphous silicon. Low energy
Molecular Dynamics simulation of Atomic
Bombardment, Molecular
Simulation,
30
p17 (2004) 53. J. Hegedus, K.
Kohary, S. Kugler: Comparative analysis of
different preparation methods of chalcogenide
glasses: Molecular dynamics structure simulations,
J.
Non-Cryst.
Solids,
338-340, p283-286 (2004)
54. S. Kugler, K.
Kohary , K. Kadas and L. Pusztai: Small bond
angles in amorphous silicon: are they a new type
of defects?, J.
Non-Cryst.
Solids,
338-340, p425-429 (2004)
55. J. Hegedus, K.
Kohary, S. Kugler, and K. Shimakawa: Photo-induced
volume
changes in selenium. Tight-binding molecular
dynamics study, J.
Non-Cryst.
Solids,
338-340, p557-560 (2004) 56. K. Shimakawa, Y.
Ikeda, S. Kugler: Fundamental optoelectronic
processes in amorphous chalcogenides;
(book chapter) Non-Crystalline
Materials
for
Optoelectronics,
Ed.
G.
Lucovsky
and
M.
A.
Popescu,
INOE
Publishing
House,
pp103-130, (2004) 57. J. Hegedus, K. Kohary, S. Kugler:
Light-induced volume changes in amoprhous
selenium. Molecular dynamics simulationl; sample
preparation and excitation: J.
Optoelectronics
and Advanced Materials, 7 pp59-64 (2005)
67. Koichi Shimakawa
and Kugler Sandor: Photoinduced volume
changes in chalcogenide glasses. (Topic,
in Japanese), Kotai
Butsuri ( 69.
R. Lukacs, J. Hegedus, and
71. R. Lukacs, J. Hegedus and S. Kugler:
Microscopic and macroscopic models of
photo-induced volume changes in amorphous selenium.
J.
Mater
Sci:
Mater
Electron, 20:S33-S37 (2009)
73. R. Lukacs and S. Kugler: Photoinduced volume changes in obliquely deposited a-Se, Phys. Status Solidi C, 7 509-512 (2010) 74. R. Lukacs, M. Veres, K. Shimakawa, and S. Kugler: On photoinduced volume change in amorphous selenium: Quantum chemical calculation and Raman spectroscopy, J. Applied Phys 107, 073517 (2010) 75. R. Lukacs, S. Kugler: A simple model for the estimation of charge accumulation in amorphous selenium, Chemical Physics Letters 494 287-288 (2010) 76. S. Kugler: What is the origin of tail states in amorphous semiconductors?, Journal of Physics:Conference Series 253 012013 (2010) 77. R. Lukacs, M. Veres, K. Shimakawa, and S. Kugler: Photoinduced bond breaking in a-Se: Raman spectroscopic study, Phys. Status Solidi C 8, No. 9, 2789–2791 (2011) 78. R. Lukacs, S. Kugler: Photoinduced Volume Changes of Obliquely and Flatly Deposited Amorphous AsSe Films Universal Description of the Kinetics, Japanese Journal of Applied Physics 50 091401 (2011) 79. S. Kugler: Advances in understanding the defects contributing to the tail states in pure amorphous silicon, J. Non-Cryst. Solids, 358 pp2060-2062 (2012) 80. R.J. Freitas, K. Shimakawa, and S. Kugler: Some remarks on glass-transition temperature in chalcogenide glasses: A correlaation with the microhardness. Chalcogenide Letters 10, pp39-43 (2013). Other publications S. Kugler and S. Kökényesi: Preface, Phys. Status Solidi C 8, No. 9, 2553–2557 (2011) |